Datenblatt-Suchmaschine für elektronische Bauteile |
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STPSA92-AP Datenblatt(PDF) 2 Page - STMicroelectronics |
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STPSA92-AP Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 5 page THERMAL DATA Rthj-amb • Rthj-case • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Case Max 200 83.3 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -200 V -100 nA V(BR)CBO Collector-Base Breakdown Voltage (IE = 0) IC = -100 µA -300 V V(BR)CEO ∗ Collector-Emitter Breakdown Voltage (IB = 0) IC = -1 mA -300 V V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0) IE = -100 µA -5 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = -20 mA IB = -2 mA -0.5 V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = -20 mA IB = -2 mA -0.9 V hFE ∗ DC Current Gain IC = -1 mA VCE = -10 V IC = -10 mA VCE = -10 V IC = -30 mA VCE = -10 V 25 40 40 fT Transition Frequency IC = -10mA VCE = -20 V f = 50 MHz 50 MHz CCEO Collector-Emitter Capacitance VCE = -20 V f = 1 MHz 50 pF ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 % STPSA92 2/5 |
Ähnliche Teilenummer - STPSA92-AP |
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Ähnliche Beschreibung - STPSA92-AP |
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