2SC2546 datasheet(2/6 Pages) RENESAS

Teilenummer	2SC2546

Bauteilbeschribung	Silicon NPN Epitaxial

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Hersteller	RENESAS [Renesas Technology Corp]

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2SC2545, 2SC2546, 2SC2547

Rev.3.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

2SC2545

2SC2546

2SC2547

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V(BR)CBO

60

—

90

—

120

—

V

IC = 10

µA, I

E = 0

Collector to emitter

breakdown voltage

V(BR)CEO

60

—

90

—

120

—

V

IC = 1 mA,

RBE =

∞

Emitter to base breakdown

voltage

V(BR)EBO

5

—

5

—

5

—

V

IE = 10

µA, I

C = 0

Collector cutoff current

ICBO

—

0.1

—

0.1

—

0.1

µA

VCB = 50 V, IE = 0

Emitter cutoff current

IEBO

—

0.1

—

0.1

—

0.1

µA

VEB = 2 V, IC = 0

DC current transfer ratio

hFE*

1

250

—

1200

600

—

1200

250

—

800

VCE = 12 V,

IC = 2 mA

Collector to emitter

saturation voltage

VCE(sat)

—

0.2

—

0.2

—

0.2

V

IC = 10 mA,

IB = 1 mA

Base to emitter voltage

VBE

—

0.6

—

0.6

—

0.6

—

V

VCE = 12 V,

IC = 2 mA

Gain bandwidth product

fT

—

90

—

90

—

90

—

MHz

VCE = 12 V,

IC = 2 mA

Collector output capacitance

Cob

—

3.0

—

3.0

—

3.0

—

pF

VCB = 10 V, IE = 0,

f = 1 MHz

Noise voltage referred input

en

—

0.5

—

0.5

—

0.5

—

nV/

√Hz

VCE = 6V,

IC = 10 mA,

f = 1 kHz,

Rg = 0,

∆f = 1Hz

Note:

1. The 2SC2545 and 2SC2547 are grouped by hFE as follows.

D

E

F

2SC2545

—

400 to 800

600 to 1200

2SC2547

250 to 500

400 to 800

—

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