Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1209K Datenblatt(PDF) 2 Page - Renesas Technology Corp |
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2SD1209K Datenblatt(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SD1209(K) Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 60 — — V IC = 0.1 mA, IE = 0 Collector cutoff current ICEO — — 100 µA VCE = 60 V, RBE = ∞ Emitter cutoff current IEBO — — 100 µA VEB = 7 V, IC = 0 DC current transfer ratio hFE 4000 — — VCE = 3 V, IC = 0.5 A* 1 Collector to emitter saturation voltage VCE(sat) — — 1.5 V IC = 500 mA, IB = 0.5 mA* 1 Base to emitter saturation voltage VBE(sat) — — 2.0 V IC = 500 mA, IB = 0.5 mA* 1 Note: 1. Pulse test |
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