Datenblatt-Suchmaschine für elektronische Bauteile |
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8TQ080GSTRL Datenblatt(PDF) 1 Page - Vishay Siliconix |
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8TQ080GSTRL Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 93416 For technical questions, contact: diodes-tech@vishay.com www.vishay.com Revision: 18-Jun-08 1 Schottky Rectifier, 8 A 8TQ...GS Vishay High Power Products FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified for industrial level DESCRIPTION The 8TQ Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. PRODUCT SUMMARY IF(AV) 8 A VR 80/100 V D2PAK Anode 1 2 3 Cathode Base cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Rectangular waveform 8 A VRRM Range 80/100 V IFSM tp = 5 µs sine 850 A VF 8 Apk, TJ = 125 °C 0.58 V TJ Range - 55 to 175 °C VOLTAGE RATINGS PARAMETER SYMBOL 8TQ080GS 8TQ100GS UNITS Maximum DC reverse voltage VR 80 100 V Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) 50 % duty cycle at TC = 157 °C, rectangular waveform 8 A Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM 5 µs sine or 3 µs rect. pulse Following any rated load condition and with rated VRRM applied 850 A 10 ms sine or 6 ms rect. pulse 230 Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 60 mH 7.50 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 µs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A |
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