Datenblatt-Suchmaschine für elektronische Bauteile |
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TYNX12 Datenblatt(PDF) 3 Page - STMicroelectronics |
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TYNX12 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 11 page TN12, TS12 and TYNx12 Series 3/11 ■ STANDARD Table 6: Thermal resistance Symbol Test Conditions TN1215 TYN Unit B / H G x12T x12 IGT VD = 12 V RL = 33 Ω MIN. 2 0.5 2 mA MAX. 15 5 15 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125°C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 40 30 15 30 mA IL IG = 1.2 IGT MAX. 80 60 30 60 mA dV/dt VD = 67 % VDRM Gate open Tj =125°C MIN. 200 40 200 V/µs VTM ITM = 24 A tp = 380 µs Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.85 V Rd Dynamic resistance Tj = 125°C MAX. 30 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µA Tj = 125°C 2mA Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) 1.3 °C/W Rth(j-a) Junction to ambient (DC) S = 0.5 cm² DPAK 70 °C/W S = 1 cm² D2PAK 45 IPAK 100 TO-220AB 60 S = Copper surface under tab. Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Average and D.C. on-state current versus case temperature 01 23 456 7 8 9 0 1 2 3 4 5 6 7 8 9 10 11 12 P(W) I (A) T(AV) α = 180° 360° α 0 25 50 75 100 125 0 2 4 6 8 10 12 14 I (A) T(AV) T (°C) case α = 180° D.C. |
Ähnliche Teilenummer - TYNX12 |
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