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IRFPS29N60LPBF Datenblatt(PDF) 2 Page - Vishay Siliconix |
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IRFPS29N60LPBF Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91255 2 S-81359-Rev. A, 07-Jul-08 IRFPS29N60L, SiHFPS29N60L Vishay Siliconix Note a. Rth is measured at TJ approximately 90 °C. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambienta RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain)a RthJC -0.26 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.53 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 17 Ab - 0.175 0.21 Ω Forward Transconductance gfs VDS = 50 V, ID = 17 Ab 15 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5b - 6160 - pF Output Capacitance Coss - 530 - Reverse Transfer Capacitance Crss -44 - Effective Output Capacitance Coss eff. VDS = 0 V to 480 Vc - 250 - Effective Output Capacitance (Energy Related) Coss eff. (ER) - 190 - Total Gate Charge Qg VGS = 10 V ID = 29 A, VDS = 480 V, see fig. 7 and 15b - - 220 nC Gate-Source Charge Qgs -- 67 Gate-Drain Charge Qgd -- 96 Internal Gate Resistance RG f = 1 MHz, open drain - 0.86 - Ω Turn-On Delay Time td(on) VDD =300 V, ID = 29 A, RG = 4.3 Ω, VGS = 10 V, see fig. 11a and 11bb -34 - ns Rise Time tr - 100 - Turn-Off Delay Time td(off) -66 - Fall Time tf -54 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 29 A Pulsed Diode Forward Currenta ISM - - 110 Body Diode Voltage VSD TJ = 25 °C, IS = 29 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 29 A TJ = 125 °C, dI/dt = 100 A/µsb - 130 190 ns - 240 360 Body Diode Reverse Recovery Charge Qrr - 630 950 µC - 1820 2720 Body Diode Recovery Current IRRM TJ = 25 °C - 9.4 14 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominatred by LS and LD) S D G |
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