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IRFPS35N50L Datenblatt(PDF) 2 Page - Vishay Siliconix |
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IRFPS35N50L Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91257 2 S-81368-Rev. A, 21-Jul-08 IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Note a. Rth is measured at TJ approximately 90 °C. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 400 µs; duty cycle ≤ 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -40 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.24 - Maximum Junction-to-Case (Drain) RthJC -0.28 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA -0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V -- ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V -- 50 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C -- 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 20 Ab - 0.125 0.145 Ω Forward Transconductance gfs VDS = 50 V, ID = 20 Ab 18 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 5580 - pF Output Capacitance Coss - 590 - Reverse Transfer Capacitance Crss -58 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - 7290 - VDS = 400 V , f = 1.0 MHz - 160 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 320 - Effective Output Capacitance (Energy Related) Coss eff. (ER) - 220 - Total Gate Charge Qg VGS = 10 V ID = 34 A, VDS = 400 V, see fig. 7 and 13b -- 230 nC Gate-Source Charge Qgs -- 65 Gate-Drain Charge Qgd -- 110 Internal Gate Resistance RG f = 1 MHz, open drain - 1.1 - Ω Turn-On Delay Time td(on) VDD = 250 V, ID = 34 A, RG = 1.2 Ω, see fig. 10b -24 - ns Rise Time tr - 100 - Turn-Off Delay Time td(off) -42 - Fall Time tf -42 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 34 A Pulsed Diode Forward Currenta ISM - - 140 Body Diode Voltage VSD TJ = 25 °C, IS = 34 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 34 A - 170 250 ns TJ = 125 °C, dI/dt = 100 A/µsb - 220 330 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IS = 34 A, VGS = 0 Vb - 670 1010 µC TJ = 125 °C, dI/dt = 100 A/µsb - 1500 2200 Reverse Recovery Current IRRM TJ = 25 °C - 8.5 - A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
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