Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLZ44PBF Datenblatt(PDF) 2 Page - Vishay Siliconix |
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IRLZ44PBF Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91328 2 S-81274-Rev. A, 16-Jun-08 IRLZ44, SiHLZ44 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Current limited by the package, (die current = 51 A). THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.070 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 µA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5.0 V ID = 31 Ab -- 0.028 Ω VGS = 4.0 V ID = 25 Ab -- 0.039 Forward Transconductance gfs VDS = 25 V, ID = 31 Ab 23 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 3300 - pF Output Capacitance Coss - 1200 - Reverse Transfer Capacitance Crss - 200 - Total Gate Charge Qg VGS = 5.0 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b -- 66 nC Gate-Source Charge Qgs -- 12 Gate-Drain Charge Qgd -- 43 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, RG = 4.6 Ω, RD = 0.56 Ω, see fig. 10b -17 - ns Rise Time tr - 230 - Turn-Off Delay Time td(off) -42 - Fall Time tf - 110 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 50c A Pulsed Diode Forward Currenta ISM - - 200 Body Diode Voltage VSD TJ = 25 °C, IS = 51 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µsb - 130 180 ns Body Diode Reverse Recovery Charge Qrr -0.84 1.3 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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Ähnliche Beschreibung - IRLZ44PBF |
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