Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1024X Datenblatt(PDF) 2 Page - Vishay Siliconix |
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SI1024X Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71170 S-80643-Rev. C, 24-Mar-08 Vishay Siliconix Si1024X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.45 0.9 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 0.5 ± 1.0 µA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 0.3 100 nA VDS = 20 V, VGS = 0 V, TJ = 85 °C 5µA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 700 mA Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 600 mA 0.41 0.70 Ω VGS = 2.5 V, ID = 500 mA 0.53 0.85 VGS = 1.8 V, ID = 350 mA 0.70 1.25 Forward Transconductancea gfs VDS = 10 V, ID = 400 mA 1.0 S Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 250 mA 750 pC Gate-Source Charge Qgs 75 Gate-Drain Charge Qgd 225 Turn-On Time td(on) VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 10 ns Turn-Off Time td(off) 36 Output Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru 1.8 V VDS - Drain-to-Source Voltage (V) 1 V Transfer Characteristics 0 200 400 600 800 1000 1200 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 125 °C 25 °C VGS - Gate-to-Source Voltage (V) |
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