Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1058X-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1058X-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 73894 S-81528-Rev. C, 30-Jun-08 Vishay Siliconix Si1058X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.1 1 VSD - Source-to-Drain Voltage (V) 0.01 10 0.8 0.6 0.4 0.2 0 1 T = 150 °C J T = 25 °C J 0.4 0.7 1.0 1.3 1.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Single Pulse Power 0.04 0.08 0.12 0.16 0.20 012345 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C I D = 1.3 A 0 3.0 5.0 1.0 2.0 Time (s) 4.0 1000 100 10 1 0.1 0.01 Safe Operating Area, Junction-to-Ambient * VGS minimum VGS at which RDS(on) is specified 10 0.1 1 10 100 0.001 1 0.01 VDS - Drain-to-Source Voltage (V) 0.1 Limited by RDS(on)* TA = 25 °C Single Pulse BVDSS Limited 10 s DC 100 ms 1 s 10 ms 1 ms |
Ähnliche Teilenummer - SI1058X-T1-E3 |
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Ähnliche Beschreibung - SI1058X-T1-E3 |
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