Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1065X Datenblatt(PDF) 1 Page - Vishay Siliconix |
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SI1065X Datenblatt(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Vishay Siliconix Si1065X New Product Document Number: 74320 S-80641-Rev. B, 24-Mar-08 www.vishay.com 1 P-Channel 12-V (D-S) MOSFET FEATURES • Halogen-free Option Available •TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch for Portable Devices PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) - 12 0.130 at VGS = - 4.5 V 1.18 6.7 0.158 at VGS = - 2.5V 1.07 0.205 at VGS = - 1.8V 0.49 Notes: a. Maximum under Steady State conditions is 650 °C/W. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 12 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID - 1.18b, c A TA = 70 °C - 0.94b, c Pulsed Drain Current IDM - 8 Continuous Source-Drain Diode Current TA = 25 °C IS - 0.2b, c Maximum Power Dissipationa TA = 25 °C PD 0.236b, c W TA = 70 °C 0.151b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t ≤ 5 s RthJA 440 530 °C/W Steady State 540 650 Ordering Information: Si1065X-T1-E3 (Lead (Pb)-free) Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code W XX Lot Traceability and Date Code Part # Code SC-89 (6-LEADS) 6 4 1 2 3 5 Top View D D G D D S S G D P-Channel MOSFET RoHS COMPLIANT |
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