Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

SI1305DL-T1 Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI1305DL-T1
Bauteilbeschribung  P-Channel 1.8-V (G-S) MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI1305DL-T1 Datenblatt(HTML) 2 Page - Vishay Siliconix

  SI1305DL-T1 Datasheet HTML 1Page - Vishay Siliconix SI1305DL-T1 Datasheet HTML 2Page - Vishay Siliconix SI1305DL-T1 Datasheet HTML 3Page - Vishay Siliconix SI1305DL-T1 Datasheet HTML 4Page - Vishay Siliconix SI1305DL-T1 Datasheet HTML 5Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
Si1305DL
Vishay Siliconix
www.vishay.com
2
Document Number: 71076
S-51075—Rev. D, 13-Jun-05
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −8 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −8 V, VGS = 0 V, TJ = 70_C
−5
mA
On-State Drain Currenta
ID(on)
VDS = −5 V, VGS = −4.5 V
−3
A
VGS = −4.5 V, ID = −1 A
0.230
0.280
Drain-Source On-State Resistancea
rDS(on)
VGS = −2.5 V, ID = −0.5 A
0.315
0.380
W
DS(on)
VGS = −1.8 V, ID = −0.3 A
0.440
0.530
Forward Transconductancea
gfs
VDS = −5 V, ID = −1 A
3.5
S
Diode Forward Voltagea
VSD
IS = −0.3 A, VGS = 0 V
−1.2
V
Dynamicb
Total Gate Charge
Qg
2.6
4
Gate-Source Charge
Qgs
VDS = −4 V, VGS = −4.5 V, ID = −1 A
0.6
nC
Gate-Drain Charge
Qgd
0.5
Turn-On Delay Time
td(on)
8
15
Rise Time
tr
VDD = −4 V, RL = 4 W
55
80
Turn-Off Delay Time
td(off)
VDD = −4 V, RL = 4 W
ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W
17
25
ns
Fall Time
tf
12
20
Source-Drain Reverse Recovery Time
trr
IF = −1 A, di/dt = 100 A/ms
27
45
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 4.5 V
TC = −55_C
125_C
2 V
25_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
1 V
2.5 V
3 V
3.5 V
4 V
1.5 V


Ähnliche Teilenummer - SI1305DL-T1

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Vishay Siliconix
SI1305DL VISHAY-SI1305DL Datasheet
42Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. C, 07-Apr-03
SI1305DL VISHAY-SI1305DL Datasheet
110Kb / 5P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 13-Jun-05
SI1305DL VISHAY-SI1305DL_05 Datasheet
110Kb / 5P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 13-Jun-05
More results

Ähnliche Beschreibung - SI1305DL-T1

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
Vishay Siliconix
SI1305DL VISHAY-SI1305DL Datasheet
42Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. C, 07-Apr-03
SI2311DS-T1-E3 VISHAY-SI2311DS-T1-E3 Datasheet
214Kb / 8P
   P-Channel 1.8-V (G-S) MOSFET
Rev. B, 24-Mar-08
SI1407DL-T1 VISHAY-SI1407DL-T1 Datasheet
80Kb / 5P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 12-Jun-06
SI4465ADY VISHAY-SI4465ADY Datasheet
216Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. A, 01-Jan-07
SI6467BDQ VISHAY-SI6467BDQ_05 Datasheet
196Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. B, 12-Dec-05
SI1307DL VISHAY-SI1307DL Datasheet
68Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. A, 01-Nov-99
SI1407DL VISHAY-SI1407DL Datasheet
64Kb / 4P
   P-Channel 1.8-V (G-S) MOSFET
Rev. C, 17-Jul-00
logo
Leshan Radio Company
LSI1013XT1G LRC-LSI1013XT1G Datasheet
371Kb / 6P
   P-Channel 1.8-V (G-S) MOSFET
logo
Vishay Siliconix
SI6467BDQ-T1-E3 VISHAY-SI6467BDQ-T1-E3 Datasheet
208Kb / 11P
   P-Channel 1.8-V (G-S) MOSFET
Rev. D, 31-Mar-08
SI2315BDS VISHAY-SI2315BDS_V01 Datasheet
181Kb / 8P
   P-Channel 1.8-V (G-S) MOSFET
01-Jan-2022
More results


Html Pages

1 2 3 4 5


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com