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SI1406DH-T1 Datenblatt(PDF) 3 Page - Vishay Siliconix

Teilenummer SI1406DH-T1
Bauteilbeschribung  N-Channel 20-V (D-S) MOSFET
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Hersteller  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
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SI1406DH-T1 Datenblatt(HTML) 3 Page - Vishay Siliconix

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Si1406DH
Vishay Siliconix
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
200
400
600
800
04
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
1.8
−50
−25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
123
456
0.00
0.04
0.08
0.12
0.16
0.20
0
2468
10
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 10 V
ID = 3.9 A
ID − Drain Current (A)
VGS = 4.5 V
ID = 3.9 A
VGS = 1.8 V
Gate Charge
On-Resistance vs. Drain Current
Qg − Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.04
0.08
0.12
0.16
0.20
0
1234
5
TJ = 150_C
TJ = 25_C
ID = 3.9 A
10
0.1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
VGS = 4.5 V
1
VGS = 2.5 V
ID = 2 A


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