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SI1411DH-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1411DH-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si1411DH Vishay Siliconix New Product www.vishay.com 4 Document Number: 73242 S-50461—Rev. B, 14-Mar-05 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) −0.5 −0.2 0.1 0.4 0.7 1.0 1.3 −50 −25 0 25 50 75 100 125 150 ID = 250 mA Threshold Voltage TJ − Temperature (_C) 0 7 35 Single Pulse Power, Junction-to-Ambient Time (sec) 21 28 10−3 10−2 1 10 600 10−1 10−4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 100_C/W 3. TJM − TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 0.1 10 1 0.01 0.001 14 Safe Operating Area 1 0.1 0.1 10 1000 0.001 0.01 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified TA = 25_C Single Pulse 1 TA = 25_C Single Pulse * Limited by rDS(on) 1 ms 1 s, 10 s 100 s, dc 10 ms 100 ms 100 10 ms 100 ms |
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