Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1433DH-T1-E3 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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SI1433DH-T1-E3 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 72323 S-71951-Rev. B, 10-Sep-07 www.vishay.com 3 Vishay Siliconix Si1433DH New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.15 0.30 0.45 0.60 0.75 012 34 56 78 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V 0 2 4 6 8 10 0 123 456 Qg - Total Gate Charge (nC) VDS = 15 V ID = 2.2 A 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 70 140 210 280 350 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Coss Ciss Crss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2.2 A TJ - Junction Temperature (°C) 0.00 0.14 0.28 0.42 0.56 0.70 0 2468 10 VGS - Gate-to-Source Voltage (V) ID = 2.2 A |
Ähnliche Teilenummer - SI1433DH-T1-E3 |
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Ähnliche Beschreibung - SI1433DH-T1-E3 |
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