SI1926DL datasheet(2/7 Pages) VISHAY

Teilenummer	SI1926DL

Bauteilbeschribung	Dual N-Channel 60-V (D-S) MOSFET

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Document Number: 73684

S-72193-Rev. B, 22-Oct-07

Vishay Siliconix

Si1926DL

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

60

V

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

56.7

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

- 3

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

12.5

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 150

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

10

VDS = 60 V, VGS = 0 V, TJ = 85 °C

100

On-State Drain Currenta

ID(on)

VDS = ≥ 10 V, VGS = 4.5 V

0.50

A

VDS = ≥ 7.5 V, VGS = 10 V

0.65

Drain-Source On-State Resistancea

rDS(on)

VGS = 10 V, ID = 0.34

1.4

Ω

VGS = 4.5 V, ID = 0.23

3

Forward Transconductance

gfs

VDS = 30 V, ID = 0.2 A

159

ms

Dynamicb

Input Capacitance

Ciss

VDS = 30 V, VGS = 0 V, f = 1 MHz

18.5

pF

Output Capacitance

Coss

7.5

Reverse Transfer Capacitance

Crss

4.2

Total Gate Charge

Qg

VDS = 30 V, VGS = 10 V, ID = 0.34

0.9

1.4

nC

VDS = 30 V, VGS = 4.5 V, ID = 0.34

0.5

0.75

Gate-Source Charge

Qgs

0.2

Gate-Drain Charge

Qgd

0.15

Gate Resistance

Rg

f = 1 MHz

160

240

Ω

Turn-On Delay Time

td(on)

VDD = 30 V, RL = 100 Ω

ID ≅ 0.3 A, VGEN = 10 V, Rg = 1 Ω

6.5

10

ns

Rise Time

tr

12

18

Turn-Off DelayTime

td(off)

13

22

Fall Time

tf

14

21

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

TC = 25 °C

0.43

A

Pulse Diode Forward Currenta

ISM

0.65

Body Diode Voltage

VSD

IS = 0.3 A

0.8

1.2

V

Body Diode Reverse Recovery Time

trr

IF = 0.6 A, di/dt = 100 A/µs

16.5

25

nC

Body Diode Reverse Recovery Charge

Qrr

13

20

ns

Reverse Recovery Fall Time

ta

13.5

Reverse Recovery Rise Time

tb

3

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