Datenblatt-Suchmaschine für elektronische Bauteile |
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SI1972DH-T1-E3 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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SI1972DH-T1-E3 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 74398 S-62442-Rev. A, 27-Nov-06 Vishay Siliconix Si1972DH TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C 1 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (°C) ID = 250 µA On-Resistance vs. Gate-Source Voltage Single Pulse Power 0.0 0.1 0.2 0.3 0.4 0.5 0.6 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) 25 °C 125 °C ID = 1.3 A 0 1 5 Time (sec) 3 4 1600 10 0.1 0.01 2 100 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) *VGS minimum VGS at which rDS(on) isspecified 10 0.1 0.1 1 10 100 1 TA = 25 °C Single Pulse 10 ms 10 s 100 ms dc 1 ms 100 µs 0.01 BVDSS Limited 1 s Limited by rDS(on) |
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