Datenblatt-Suchmaschine für elektronische Bauteile |
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BZX55B30 Datenblatt(PDF) 4 Page - Vishay Siliconix |
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BZX55B30 Datenblatt(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number 85604 Rev. 1.5, 05-Jul-07 BZX55-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified Figure 1. Thermal Resistance vs. Lead Length Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb = 25 °C 95 9611 0 5 10 15 0 100 200 300 400 500 20 ll I - Lead Length (mm) T L = constant 0 120 160 0 100 300 400 500 600 T amb - Ambient Temperature (°C) 200 95 9602 200 80 40 10 15 20 1 10 100 1000 V Z - Z-Voltage (V) 25 95 9598 T j = 25 °C I Z = 5 mA 0 5 Figure 4. Typical Change of Working Voltage vs. Junction Temperature Figure 5. Temperature Coefficient of Vz vs. Z-Voltage Figure 6. Diode Capacitance vs. Z-Voltage - 60 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 T j - Junction Temperature (°C) 240 95 9599 0 V Ztn = VZt/VZ (25 °C) 0 TK VZ = 10 x 10 -4/K 8 x 10-4/K 2 x 10-4/K 6 x 10-4/K 4 x 10-4/K - 4 x 10-4/K - 2 x 10-4/K 30 - 5 0 5 10 15 V Z - Z-Voltage (V) 50 95 9600 40 I Z = 5 mA 10 20 0 10 15 0 50 100 150 200 V Z - Z-Voltage (V) 25 95 9601 20 T j = 25 °C V R = 2 V 0 5 |
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