Datenblatt-Suchmaschine für elektronische Bauteile |
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TSAL7600 Datenblatt(PDF) 3 Page - Vishay Siliconix |
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TSAL7600 Datenblatt(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 81015 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.7, 04-Sep-08 129 TSAL7600 High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature Fig. 8 - Relative Radiant Power vs. Wavelength tp - Pulse Duration (ms) 96 11987 100 101 101 10-1 10-1 100 102 10-2 tp/T = 0.01 IFSM = 1 A (Single Pulse) 0.05 0.1 0.5 1.0 VF - Forward Voltage (V) 13600 101 100 102 103 104 tP = 100 µs tP/T = 0.001 0 4 3 2 1 14255 103 101 102 104 100 0.1 1 10 1000 100 IF - Forward Current (mA) IF - Forward Current (mA) 13602 103 101 102 104 100 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0.8 1.2 1.6 140 94 7993 IF = 20 mA Tamb - Ambient Temperature (°C) 890 0 0.25 0.5 0.75 1.0 1.25 - Wavelength (nm) 14291 I F = 100 mA λ 990 940 |
Ähnliche Teilenummer - TSAL7600_08 |
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Ähnliche Beschreibung - TSAL7600_08 |
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