Datenblatt-Suchmaschine für elektronische Bauteile |
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ST173C12CHK1P Datenblatt(PDF) 2 Page - Vishay Siliconix |
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ST173C12CHK1P Datenblatt(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94366 2 Revision: 29-Apr-08 ST173CPBF Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 330 A CURRENT CARRYING CAPABILITY FREQUENCY UNITS 50 Hz 760 660 1200 1030 5570 4920 A 400 Hz 730 590 1260 1080 2800 2460 1000 Hz 600 490 1200 1030 1620 1390 2500 Hz 350 270 850 720 800 680 Recovery voltage Vr 50 50 50 V Voltage before turn-on Vd VDRM VDRM VDRM Rise of on-state current dI/dt 50 - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current at heatsink temperature IT(AV) 180° conduction, half sine wave double side (single side) cooled 330 (120) A 55 (85) °C Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 610 A Maximum peak, one half cycle, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 4680 t = 8.3 ms 4900 t = 10 ms 100 % VRRM reapplied 3940 t = 8.3 ms 4120 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 110 kA2s t = 8.3 ms 100 t = 10 ms 100 % VRRM reapplied 77 t = 8.3 ms 71 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2 √s Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.07 V Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 1.55 High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ = TJ maximum 1.61 Low level value of forward slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ = TJ maximum 0.87 m Ω High level value of forward slope resistance rt2 (I > π x I T(AV)), TJ = TJ maximum 0.77 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 mA Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/µs Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source 1.1 µs Maximum turn-off time minimum tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code 15 maximum 30 180° el I TM 180° el I TM 100 µs I TM |
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