BAT62-08S datasheet(1/1 Pages) KEXIN

Teilenummer	BAT62-08S

Bauteilbeschribung	Silicon Schottky Diode

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Diodes

SOT-363

Unit: mm

1.3+0.1

-0.1

0.65

0.1+0.05

-0.02

0.3+0.1

-0.1

2.1+0.1

-0.1

Silicon Schottky Diode

BAT62-08S;BAT62-09S

Features

Low barrier diode for detectors up to GHz frequencies

Absolute M axim um Ratings Ta = 25

Param eter

Sym bol

Rating

Unit

Diode reverse voltage

VRM

40

V

Forward current

VR

20

V

Total power dissipation; TS

105

IFM

100

m A

Junction tem perature

Tj

150

Storage tem perature range

Tstg

-55to+150

Junction - soldering point

1)

BAT62-08S

450

BAT62-09S

tbd

Note

RthJS

K/W

1.For calculation of RthJA please refer to Application Note Therm al Resistance

Electrical C haracteristics T a = 25

P aram eter

S ym bol

Conditions

M in

Typ

M ax

Unit

Reverse current

IR

V R =40 V

10

A

Forward voltage

V F

IF = 2 m A

0.58

1

V

Forward voltage m atching

2)

ÄV F

IF = 2 mA

20

mV

Note

2.Ä V F is the difference between lowest and highest V F in a m ultiple diode com ponent.

Marking

Type

BAT62-08S

BAT62-09S

Marking

62s

69s

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Ähnliche Beschreibung - BAT62-08S

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