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BCW89 Datenblatt(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer BCW89
Bauteilbeschribung  PNP General Purpose Transistors
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

BCW89 Datenblatt(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
ICBO
IE =0; VCB =-20 V
-100
nA
ICBO
IE =0; VCB =-20 V; Tj =100
-10
ìA
Emitter cutoff current
IEBO
IC =0; VEB = -5 V
-100
nA
IC =-10 ìA; VCE =-5V
90
IC =-2mA; VCE = -5 V
120
260
IC =-10 mA; IB = -0.5 mA
-80
-300
mV
IC =-50 mA; IB = -2.5 mA
-150
mV
IC =-10 mA; IB = -0.5 mA
-720
mV
IC =-50 mA; IB = -2.5 mA
-810
mV
Base to emitter voltage
VBE
IC =-2mA; VCE = -5 V
-600
-750
mV
Collector capacitance
CC
IE =ie=0; VCB = -10 V; f = 1 MHz
4.5
pF
Transition frequency
fT
IC =-10 mA; VCE =-5V; f = 100MHz
100
MHz
Noise figure
NF
IC = -200 ìA; VCE =-5V; RS =2kÙ;
f= 1 kHz;B= 200 Hz
10
dB
Collector cutoff current
Collector-emitter saturation voltage
Base to emitter saturation voltage
VBE(sat)
VCE(sat)
hFE
DC current gain
Marking
Marking
H3
BCW89


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