2SD1252 datasheet(1/2 Pages) KEXIN

Teilenummer	2SD1252

Bauteilbeschribung	Silicon NPN Triple Diffusion Junction Type

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Hersteller	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

Transistors

1

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

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Silicon NPN Triple Diffusion Junction Type

2SD1252,2SD1252A

Features

Power transistors.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

2SD1252

60

V

2SD1252A

80

V

Collector-emitter voltage

2SD1252

60

V

2SD1252A

80

V

Emitter-base voltage

VEBO

6V

Collector current

IC

3A

Peak collector current

ICP

5A

Collector power dissipation

Ta = 25

1.3

W

Tc = 25

35

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

VCBO

VCEO

PC

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