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2SK1254S Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Teilenummer 2SK1254S
Bauteilbeschribung  Silicon N-Channel MOSFET
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Hersteller  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SK1254S Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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SMD Type
IC
www.kexin.com.cn
1
MOSFET
SMD Type
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1Gate
2Drain
3Source
Silicon N-Channel MOSFET
2SK1254S
Features
Low on-resistance
High speed switching
Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
120
V
Gate to source voltage
VGSS
20
V
Drain current (DC)
ID
3A
Drain current(pulse) *
ID
12
A
Power dissipation
PD
20
W
Channel temperature
Tch
150
Storage temperature
Tstg
-55to+150
*PW
10
s, duty cycle
1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain to source breakdown voltage
VDSS
ID=10mA,VGS=0
120
V
Gate to source breakdown voltage
VGSS
ID=
100
A,VDS=0
20
V
Drain cut-off current
IDSS
VDS=100V,VGS=0
100
A
Gate leakage current
IGSS
VGS=
16V,VDS=0
10
A
Gate to source cutoff voltage
VGS(off)
VDS=10V,ID=1mA
1.0
2.0
V
Forward transfer admittance
Yfs
VDS=10V,ID=2A
2.4
4.0
s
VGS=10V,ID=2A
0.30
0.40
VGS=4V,ID=2A
0.35
0.55
Input capacitance
Ciss
420
pF
Output capacitance
Coss
190
pF
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
td(on)
5ns
Rise time
tr
20
ns
Turn-off delay time
td(off)
150
ns
Fall time
tf
45
ns
VDS=10V,VGS=0,f=1MHZ
ID=2A,VGS(on)=10V,RL=15
Drain to source on-state resistance
RDS(on)


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