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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SK1589 Datenblatt(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SK1589 Datenblatt(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type MOSFET 1 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 1GATE 2 SOURCE 3 DRAIN www.kexin.com.cn MOS Field Effect Transistor 2SK1589 Features Directly driven by Ics having a 5V power supply. Not necessary to consider driving current because of its high input impedance. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS 20 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Power dissipation PD 2.0 W Channel temperature Tch 150 Storage temperature Tstg -55to+150 *PW 10ms, duty cycle 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=100V,VGS=0 10 A Gate leakage current IGSS VGS= 20V,VDS=0 1.0 A Gate to source cutoff voltage VGS(off) VDS=5V,ID=1 A 0.8 1.5 1.8 V Forward transfer admittance Yfs VDS=5.0V,ID=10mA 20 38 ms VGS=4.0V,ID=10mA 19 30 VGS=10V,ID=10mA 15 25 Input capacitance Ciss 16 pF Output capacitance Coss 12 pF Reverse transfer capacitance Crss 3pF Turn-on delay time td(on) 17 ns Rise time tr 10 ns Turn-off delay time td(off) 68 ns Fall time tf 38 ns VDS=5.0V,VGS=0,f=1MHZ ID=10mA,VGS(on)=5.0V,RL=500 ,VDD=5V,RG=10 Drain to source on-state resistance RDS(on) Marking Marking G17 |
Ähnliche Teilenummer - 2SK1589 |
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Ähnliche Beschreibung - 2SK1589 |
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