Datenblatt-Suchmaschine für elektronische Bauteile |
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BU108 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU108 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU108 DESCRIPTION ·High Voltage ·High Switching Speed ·Collector Current- IC = 5A APPLICATIONS ·Designed for high voltage CRT scanning applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB B Base Current-Continuous 3.5 A IE Emitter Current-Continuous 8.5 A PC Collector Power Dissipation @VCE≤100V,TC≤95℃ 12.5 W TJ Junction Temperature 115 ℃ Tstg Storage Temperature -65~115 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.6 ℃/W isc Website:www.iscsemi.cn |
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Ähnliche Beschreibung - BU108 |
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