Datenblatt-Suchmaschine für elektronische Bauteile |
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MJ11013 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ11013 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Darlington Power Transistor MJ11013 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage- : VCE (sat)= -3.0V(Max.)@ IC= -20A ·Complement to Type MJ11014 APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -90 V VCEO Collector-Emitter Voltage -90 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continunous -30 A ICM Collector Current-Peak -50 A IB Base Current-Continunous -1 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.87 ℃/W |
Ähnliche Teilenummer - MJ11013 |
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Ähnliche Beschreibung - MJ11013 |
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