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MJ11014 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer MJ11014
Bauteilbeschribung  isc Silicon NPN Darlington Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
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MJ11014 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon NPN Darlington Power Transistor
MJ11014
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.)
·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
·Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
·Complement to Type MJ11013
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
90
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
30
A
ICM
Collector Current-Peak
50
A
IB
Base Current-Continunous
1
A
PC
Collector Power Dissipation
@TC=25℃
200
W
Tj
Junction Temperature
200
℃
Tstg
Storage Temperature Range
-55~+200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.87
℃/W


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