Datenblatt-Suchmaschine für elektronische Bauteile |
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MJ11017 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ11017 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Darlington Power Transistor M J11017 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -100mA, IB= 0 -150 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -10A ,IB= -0.1A -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -15A ,IB= -0.15A -3.8 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.8 V ICEV Collector Cutoff Current VCEV=150V;VBE(off)=1.5V VCEV=150V;VBE(off)=1.5V;TC=150℃ -0.5 -5.0 mA ICEO Collector Cutoff Current VCE= -75V, IB=0 -1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -2 mA hFE-1 DC Current Gain IC= -10A ; VCE= -5V 400 15000 hFE-2 DC Current Gain IC= -15A ; VCE= -5V 100 COB Output Capacitance IE= 0 ; VCB= -10V,f= 0.1MHz 600 pF Switching times td Delay Time 75 ns tr Rise Time 0.5 μs ts Storage Time 2.7 μs tf Fall Time IC= -10A , VCC= -100V; IB1= -0.1A; VBE(off)= -5V; Duty Cycle≤1.0% 2.5 μs |
Ähnliche Teilenummer - MJ11017 |
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Ähnliche Beschreibung - MJ11017 |
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