Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2508DF Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2508DF Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ; IB= 0,L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.12A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 1.7A 1.1 V ICES Collector Cutoff Current VCE= 1500V ; VBE= 0 VCE= 1500V ; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 227 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 13 hFE-2 DC Current Gain IC= 4.5A ; VCE= 1V 4 7 VECF C-E Diode Forward Voltage IF= 4.5A 2.0 V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 80 pF Switching times tstg Storage Time 6.0 μs tf Fall Time IC= 4.5A , IB(end)= 1.1A; LB= 6μH -VBB= 4V; (-dIB/dt= 0.6A/μs) 0.6 μs isc Website:www.iscsemi.cn 2 |
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