Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2506AF Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU2506AF Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2506AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.79A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.79A B 1.1 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V 12 hFE-2 DC Current Gain IC= 3A; VCE= 5V 3.8 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 47 pF isc Website:www.iscsemi.cn 2 |
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