TSAL6100

Vishay Telefunken

1 (5)

Rev. 2, 20-May-99

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81009

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1

¾)

Package

Description

TSAL6100 is a high efficiency infrared emitting diode

in GaAlAs on GaAs technology, molded in clear, blue-

grey tinted plastic packages.

In comparison with the standard GaAs on GaAs

technology these emitters achieve more than 100 %

radiant power improvement at a similar wavelength.

The forward voltages at low current and at high pulse

current roughly correspond to the low values of the

standard technology. Therefore these emitters are

ideally suitable as high performance replacements of

standard emitters.

Features

D Extra high radiant power and radiant intensity

D High reliability

D Low forward voltage

D Suitable for high pulse current operation

D Standard T–1¾ (ø 5 mm) package

D Angle of half intensity ϕ = ± 10°

D Good spectral matching to Si photodetectors

94 8389

Applications

Infrared remote control units with high power requirements

Free air transmission systems

Infrared source for optical counters and card readers

IR source for smoke detectors

Absolute Maximum Ratings

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

5

V

Forward Current

100

mA

Peak Forward Current

200

mA

Surge Forward Current

1.5

A

Power Dissipation

210

mW

Junction Temperature

100

°C

Operating Temperature Range

–55...+100

°C

Storage Temperature Range

–55...+100

°C

Soldering Temperature

t

x 5sec, 2 mm from case

260

°C

Thermal Resistance Junction/Ambient

350

K/W