Datenblatt-Suchmaschine für elektronische Bauteile |
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ST420S Datenblatt(PDF) 1 Page - SamHop Microelectronics Corp. |
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ST420S Datenblatt(HTML) 1 Page - SamHop Microelectronics Corp. |
1 / 9 page N-Channel Logic Level E nhancement Mode Field E ffect Transistor TO-252 and TO-251 Package. ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) S amHop Microelectronics C orp. 1 P R ODUC T S UMMAR Y V DS S ID R DS (ON) ( m W ) 40V 24A 24 @ V GS = 10V 30 @ V GS = 4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S G D S TU S E R IE S TO-252AA(D-PAK) S TD S E R IE S TO-251(l-PAK) G G S S D D THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Case Thermal R esistance, Junction-to-Ambient R JC 3 50 R JA /W C /W C 40 Parameter S ymbol Limit Unit Drain-S ource Voltage VDS V Gate-S ource Voltage 20 VGS V -Pulsed 24 ID A 75 IDM A Drain-S ource Diode Forward Current 8 IS A Maximum Power Dissipation PD W Operating and S torage Temperature R ange TJ, TS TG -55 to 175 C @ Tc=25 C 50 Drain Current-Continuous @ TC=25 C a Max S T U/D420S b J uly 05,2006 |
Ähnliche Teilenummer - ST420S |
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Ähnliche Beschreibung - ST420S |
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