Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1610 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1610 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1610 DESCRIPTION · ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·For high speed power switching applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A PT Total power dissipation TC=25℃ 100 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.17 ℃/W Fig.1 simplified outline (TO-3) and symbol |
Ähnliche Teilenummer - 2SC1610 |
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Ähnliche Beschreibung - 2SC1610 |
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