Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC1785 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1785 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1785 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=10A; IB=1A 2.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=1A 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V 20 |
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