Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2440 Datenblatt(PDF) 2 Page - Savantic, Inc. |
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2SC2440 Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2440 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=100µA ; IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=100µA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.4A 0.8 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 100 µA hFE DC current gain IC=2 A ; VCE=5V 15 Switching times ton Turn-on time 1.5 µs ts Storage time 4.0 µs tf Fall time IC=3A; IB1=0.3A IB2=-0.3A;RL=20A 1.3 µs |
Ähnliche Teilenummer - 2SC2440 |
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Ähnliche Beschreibung - 2SC2440 |
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