Datenblatt-Suchmaschine für elektronische Bauteile |
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BU1508AX Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BU1508AX Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU1508AX CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0;L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.1A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.7A 1.1 V ICES Collector cut-off current VCE=rated;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 1.0 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 13 hFE-2 DC current gain IC=4.5A ; VCE=1V 4.0 5.5 7.0 CC Collector output capacitance IE=0;f=1MHz;VCB=10V 80 pF |
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