Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2520DX Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BU2520DX Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2520DX CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 800 V V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.1 V ICES Collector cut-off current VCE=BVCES; VBE=0 TC=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 100 300 mA hFE-1 DC current gain IC=1A ; VCE=5V 13 hFE-2 DC current gain IC=6A ; VCE=5V 5 7 9.5 VF Diode forward voltage IF=6A 2.2 V CC Collector capacitance IE=0 ; VCB=10V;f=1MHz 115 pF |
Ähnliche Teilenummer - BU2520DX |
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Ähnliche Beschreibung - BU2520DX |
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