Datenblatt-Suchmaschine für elektronische Bauteile |
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BU2725DX Datenblatt(PDF) 2 Page - Savantic, Inc. |
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BU2725DX Datenblatt(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BU2725DX CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 13.5 V VCE(sat) Collector-emitter saturation voltage IC=7A ;IB=1.75 A 1.0 V VBE(sat) Base-emitter saturation voltage IC=7A ;IB=1.75 A 0.78 0.86 0.95 V ICES Collector cut-off current VCE=BVCES; VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=7.5V; IC=0 110 mA hFE-1 DC current gain IC=1A ; VCE=5V 19 hFE-2 DC current gain IC=7A ; VCE=1V 3.8 7.8 VF Diode forward voltage IF=7A 2.2 V |
Ähnliche Teilenummer - BU2725DX |
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Ähnliche Beschreibung - BU2725DX |
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