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BC517 Datenblatt(PDF) 1 Page - SEMTECH ELECTRONICS LTD.

Teilenummer BC517
Bauteilbeschribung  NPN Silicon Darlington Transistor
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Hersteller  SEMTECH_ELEC [SEMTECH ELECTRONICS LTD.]
Direct Link  http://www.semtech.net.cn
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Dated :15/06/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
BC517
NPN Silicon Darlington Transistor
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
40
V
Collector Emitter Voltage
VCES
30
V
Emitter Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
Ptot
625
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics (Ta = 25 OC)
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 2 V, IC = 20 mA
hFE
30,000
-
-
-
Collector Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
VCEsat
-
-
1
V
Base Emitter On Voltage
at VCE = 5 V, IC = 10 mA
VBE(on)
-
-
1.4
V
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
40
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
V(BR)CES
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
10
-
-
V
Collector Cutoff Current
at VCE = 30 V
ICES
-
-
500
nA
Collector Cutoff Current
at VCB = 30 V
ICBO
-
-
100
nA
Emitter Cutoff Current
at VEB = 10 V
IEBO
-
-
100
nA
Current-Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
fT
-
200
-
MHz
Base
Emitter
Collector
TO-92 Plastic Package
Weight approx. 0.19g


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