Dated : 10/11/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
ST 2SB1116 / 2SB1116A
PNP Silicon Epitaxial Planar Transistor
Audio frequency power amplifier and medium
speed switching.
The transistor is subdivided into three groups,
Y, G and L, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
2SB1116
2SB1116A
-VCBO
60
80
V
Collector Emitter Voltage
2SB1116
2SB1116A
-VCEO
50
60
V
Emitter Base Voltage
-VEBO
6
V
Collector Current
-IC
1
A
Collector Current (Pulse)
-ICP
2
A
Power Dissipation
Ptot
0.75
W
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -VCE = 2 V, -IC = 0.1 A
at -VCE = 2 V, -IC = 1 A
Y
G
L
hFE
hFE
hFE
hFE
135
200
300
81
270
400
600
-
-
-
-
-
Collector Cutoff Current
at -VCB = 60 V
-ICBO
-
100
nA
Emitter Cutoff Current
at -VEB = 6 V
-IEBO
-
100
nA
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VCE(sat)
-
0.4
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VBE(sat)
-
1.2
V
Base Emitter On Voltage
at -VCE = 2 V, -IC = 50 mA
-VBE(on)
0.6
0.7
V
Gain Bandwidth Product
at -VCE = 2 V, -IC = 100 mA
fT
70
-
MHz
TO-92 Plastic Package
Weight approx. 0.19g