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BTA30-600CW3G Datenblatt(PDF) 5 Page - ON Semiconductor

Teilenummer BTA30-600CW3G
Bauteilbeschribung  Silicon Bidirectional Thyristors
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BTA30-600CW3G Datenblatt(HTML) 5 Page - ON Semiconductor

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BTA30−600CW3G, BTA30−800CW3G
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5
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
5000
4K
3K
2K
1K
0
10000
1000
100
10
VD = 800 Vpk
TJ = 125°C
LL
1N4007
200 V
+
MEASURE
I
-
CHARGE
CONTROL
CHARGE
TRIGGER
NON‐POLAR
CL
51
W
MT2
MT1
1N914
G
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Gate Trigger Voltage Variation
125
95
50
5
−10
−40
0
5
10
15
20
25
−25
20
35
65 80
110
Q3
Q2
Q1
VD = 12 V
RI = 30 W
125
95
50
5
−10
−40
0.1
0.3
0.5
0.9
1.1
1.3
−25
20
35
65 80
110
Q3
Q2
Q1
VD = 12 V
RI = 30 W
0.7
TJ, JUNCTION TEMPERATURE (°C)
125
95
50
5
−10
−40
20
30
40
60
70
80
−25
20
35
65 80
110
Q3
Q2
Q1
VD = 12 V
RI = 30 W
50
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
Figure 9. Latching Current Variation
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c


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