Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

1N4006G Datenblatt(PDF) 1 Page - SynSemi, Inc.

Teilenummer 1N4006G
Bauteilbeschribung  GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  SYNSEMI [SynSemi, Inc.]
Direct Link  http://www.synsemi.com
Logo SYNSEMI - SynSemi, Inc.

1N4006G Datenblatt(HTML) 1 Page - SynSemi, Inc.

  1N4006G Datasheet HTML 1Page - SynSemi, Inc. 1N4006G Datasheet HTML 2Page - SynSemi, Inc.  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
1N4001G - 1N4007G
GLASS PASSIVATED JUNCTION
BY133G
SILICON RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N
4001G
1N
4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
BY
133G
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
1300
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
910
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
1300
V
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
VF
1.0
V
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
µA
at rated DC Blocking Voltage
Ta = 100
°C
IR(H)
50
µA
Typical Junction Capacitance (Note1)
CJ
8
pF
Typical Thermal Resistance (Note2)
R
θJA
45
°C/W
Junction Temperature Range
TJ
- 65 to + 175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : January 10, 2004
A
A
RATING
IF(AV)
1.0
IFSM
30
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)


Ähnliche Teilenummer - 1N4006G

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
NXP Semiconductors
1N4006G PHILIPS-1N4006G Datasheet
40Kb / 5P
   Rectifiers(Rugged glass package, using a high temperature alloyed construction)
1996 May 24
logo
Microdiode Electronics ...
1N4006G CHENDA-1N4006G Datasheet
735Kb / 2P
   GLASS PASSIVATED SILICON RECTIFIER
logo
Gulf Semiconductor
1N4006G GULFSEMI-1N4006G Datasheet
89Kb / 2P
   GLASS PASSIVATED JUNCTION RECTIFIERVOLTAGE: 50 TO 1000V CURRENT: 1.0A
logo
Leshan Radio Company
1N4006G LRC-1N4006G Datasheet
51Kb / 2P
   1A GENERAL PURPOSE GPP DIODES
1N4006G LRC-1N4006G Datasheet
186Kb / 7P
   General Purpose Plastic Rectifiers Reverse Voltage 50 to 1200V Forward Current 1.0A
More results

Ähnliche Beschreibung - 1N4006G

HerstellerTeilenummerDatenblattBauteilbeschribung
logo
EIC discrete Semiconduc...
1N5400G EIC-1N5400G Datasheet
16Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
logo
SynSemi, Inc.
1N5400G SYNSEMI-1N5400G Datasheet
36Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
logo
EIC discrete Semiconduc...
1N5391G EIC-1N5391G_05 Datasheet
47Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G EIC-DR200G Datasheet
39Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N3611 EIC-1N3611 Datasheet
82Kb / 1P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
DR200G EIC-DR200G_05 Datasheet
3Mb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5400G EIC-1N5400G_05 Datasheet
44Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
1N5614 EIC-1N5614 Datasheet
125Kb / 1P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
logo
SynSemi, Inc.
1N5391G SYNSEMI-1N5391G Datasheet
39Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
logo
EIC discrete Semiconduc...
1N4001G EIC-1N4001G Datasheet
16Kb / 2P
   GLASS PASSIVATED JUNCTION SILICON RECTIFIERS
More results


Html Pages

1 2


Datenblatt Download

Go To PDF Page


Link URL




Privatsphäre und Datenschutz
ALLDATASHEETDE.COM
War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com