Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA968B Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA968B Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA968 2SA968A 2SA968B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA968 -160 2SA968A -180 V(BR)CEO Collector-emitter breakdown voltage 2SA968B IC=-10mA; IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.5 V VBE Base-emitter on voltage IC=-500mA ; VCE=-5V -1.0 V ICBO Collector cut-off current VCB=-160V ;IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1.0 μA hFE DC current gain IC=-100mA ; VCE=-5V 70 240 Cob Output capacitance IE=0 ; VCB=-10V,f=1MHz 30 pF fT Transition frequency IC=-100mA ; VCE=10V 100 MHz hFE Classifications O Y 70-140 120-240 |
Ähnliche Teilenummer - 2SA968B |
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Ähnliche Beschreibung - 2SA968B |
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