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TPS1120 Datenblatt(Datasheet) 1 Page - Texas Instruments

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Teile-Nr. TPS1120
Beschreibung  DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
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Hersteller  TI [Texas Instruments]
Homepage  http://www.ti.com
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TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Low rDS(on) . . . 0.18 Ω at VGS = –10 V
D 3-V Compatible
D Requires No External VCC
D TTL and CMOS Compatible Inputs
D VGS(th) = –1.5 V Max
D ESD Protection Up to 2 kV per
MIL-STD-883C, Method 3015
description
The TPS1120 incorporates two independent
p-channel enhancement-mode MOSFETs that
have been optimized, by means of the Texas
Instruments LinBiCMOS
™ process, for 3-V or 5-V
power distribution in battery-powered systems. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 µA,
the TPS1120 is the ideal high-side switch for low-voltage portable battery-management systems, where
maximizing battery life is a primary concern. Because portable equipment is potentially subject to electrostatic
discharge (ESD), the MOSFETs have built-in circuitry for 2-kV ESD protection. End equipment for the TPS1120
includes notebook computers, personal digital assistants (PDAs), cellular telephones, bar-code scanners, and
PCMCIA cards. For existing designs, the TPS1120D has a pinout common with other p-channel MOSFETs in
small-outline integrated circuit SOIC packages.
The TPS1120 is characterized for an operating junction temperature range, TJ, from –40°C to 150°C.
AVAILABLE OPTIONS
PACKAGED DEVICES†
CHIP FORM
TJ
SMALL OUTLINE
(D)
CHIP FORM
(Y)
–40
°C to 150°C
TPS1120D
TPS1120Y
† The D package is available taped and reeled. Add an R suffix to device
type (e.g., TPS1120DR). The chip form is tested at 25
°C.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic
fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to
MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than
maximum-rated voltages to these high-impedance circuits.
LinBiCMS is a trademark of Texas Instruments Incorporated.
Copyright
© 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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1SOURCE
1GATE
2SOURCE
2GATE
1DRAIN
1DRAIN
2DRAIN
2DRAIN
D PACKAGE
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