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TPS1120 Datenblatt(Datasheet) 3 Page - Texas Instruments

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Teile-Nr. TPS1120
Beschreibung  DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
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Hersteller  TI [Texas Instruments]
Homepage  http://www.ti.com
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TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
3
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
UNIT
Drain-to-source voltage, VDS
–15
V
Gate-to-source voltage, VGS
2 or –15
V
VGS =2 7 V
TA = 25°C
±0.39
VGS = – 2.7 V
TA = 125°C
±0.21
VGS =3 V
TA = 25°C
±0.5
Continuous drain current each device (TJ = 150°C) ID
VGS = – 3 V
TA = 125°C
±0.25
A
Continuous drain current, each device (TJ = 150°C), ID
VGS =4 5 V
TA = 25°C
±0.74
A
VGS = – 4.5 V
TA = 125°C
±0.34
VGS =10 V
TA = 25°C
±1.17
VGS = – 10 V
TA = 125°C
±0.53
Pulse drain current, ID
TA = 25°C
±7
A
Continuous source current (diode conduction), IS
TA = 25°C
–1
A
Continuous total power dissipation
See Dissipation Rating Table
Storage temperature range, Tstg
– 55 to 150
°C
Operating junction temperature range, TJ
– 40 to 150
°C
Operating free-air temperature range, TA
– 40 to 125
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
260
°C
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DISSIPATION RATING TABLE
PACKAGE
TA ≤ 25°C
POWER RATING
DERATING FACTOR‡
ABOVE TA = 25°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
TA = 125°C
POWER RATING
D
840 mW
6.71 mW/
°C
538 mW
437 mW
169 mW
‡ Maximum values are calculated using a derating factor based on RθJA = 149°C/W for the package. These devices are
mounted on an FR4 board with no special thermal considerations.




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