KTD2686 datasheet(1/2 Pages) KEC

Teilenummer	KTD2686

Bauteilbeschribung	DARLINGTON TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

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2004. 11. 22

1/2

SEMICONDUCTOR

TECHNICAL DATA

KTD2686

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 1

DARLINGTON TRANSISTOR.

SOLENOID DRIVER. MOTOR DRIVER.

FEATURES

High DC Current Gain

: hFE=2000(Min.) (VCE=2V, IC=1A)

MAXIMUM RATINGS (Ta=25

)

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.75 MAX

0.75 MIN

0.5+0.10/-0.05

SOT-89

C

J

G

D

12

3

2. COLLECTOR (HEAT SINK)

A

C

K

F

MILLIMETERS

H

1. BASE

3. EMITTER

FF

D

+_

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=45V, IE=0

-

10

A

ICEO

VCE=45V, IB=0

-

10

A

Emitter Cut-off Current

IEBO

VEB=8V, IC=0

0.8

-

4

mA

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=10mA, IB=0

50

60

70

V

DC Current Gain

hFE

VCE=2V, IC=1A

2000

-

Collector-Emitter Saturation Voltage

VCE(sat)1

IC=0.5A, IB=1mA

-

1.2

V

VCE(sat)2

IC=1A, IB=1mA

-

1.5

Base-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=1mA

-

2.0

V

Switching

Time

Turn On Time

ton

CC

20

µs

5V

0V

1%

DUTY CYCLE <=

V

=30V

30

Ω

INPUT

OUTPUT

-

0.4

-

S

Storage Time

tstg

-

4.0

-

Fall Time

tf

-

0.6

-

Type Name

Lot No.

Marking

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

50

V

Collector-Emitter Voltage

VCEO

60

10

V

Emitter-Base Voltage

VEBO

8

V

Collector Current

DC

IC

1

A

Pulse

ICP

3

Base Current

IB

0.5

A

Collector Power

Dissipation

t=10S

PC *

2.5

W

DC

1

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55

150

* Pc : Package mounted on FR4 board (Cu area : 645

, glass epoxy, t=1.6

)

COLLECTOR

BASE

EMITTER

5k

Ω

300

Ω

−∼

EQUIVALENT CIRCUIT

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