Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2331 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2331 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com 3 Silicon Power Transistors 2SC2331 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Base-emitter sustaining voltage IC=1.0A ,IB=0.1A,L=1mH 100 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.6 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.1A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 40 hFE-2 DC current gain IC=1A ; VCE=5V 40 200 Switching times resistive load ton Turn-on time 0.5 μs ts Storage time 1.5 μs tf Fall time IC=1.0A IB1=- IB2=0.1A RL=50Ω;VCC≈50V 0.5 μs hFE-2 Classifications M L K 40-80 60-120 100-200 |
Ähnliche Teilenummer - 2SC2331 |
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Ähnliche Beschreibung - 2SC2331 |
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