Datenblatt-Suchmaschine für elektronische Bauteile |
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2SD1276A Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SD1276A Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1276 60 V VCEO Collector-emitter breakdown voltage 2SD1276A IC=30mA , IB=0 80 V IC=3A IB=12mA 2 V VCEsat Collector-emitter saturation voltage IC=5A IB=20mA 4 V VBE Base-emitter voltage VCE=3V IC=3A 2.5 V 2SD1276 VCB=60V IE=0 0.2 mA ICBO Collector cut-off current 2SD1276A VCB=80V IE=0 0.2 mA 2SD1276 VCE=30V IB=0 0.5 mA ICEO Collector cut-off current 2SD1276A VCE=40V IB=0 0.5 mA IEBO Emitter cut-off current VEB=5V; IC=0 2 mA hFE-1 DC current gain IC=3A ; VCE=0.5V 1000 hFE-2 DC current gain IC=3A ; VCE=3V 2000 10000 fT Transition frequency IC=0.5A; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 4 μs tf Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 1 μs hFE-2 Classifications Q R 2000-5000 4000-10000 |
Ähnliche Teilenummer - 2SD1276A |
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Ähnliche Beschreibung - 2SD1276A |
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