2SD1277 datasheet(2/3 Pages) JMNIC

Teilenummer	2SD1277

Bauteilbeschribung	Silicon NPN Power Transistors

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Hersteller	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Product Specification

www.jmnic.com

JMnic

Silicon NPN Power Transistors

2SD1277 2SD1277A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SD1277

60

V

VCEO

Collector-emitter

breakdown voltage

2SD1277A

IC=30mA , IB=0

80

V

VCEsat

Collector-emitter saturation voltage

IC=4A IB=8mA

1.5

V

VBEsat

Base-emitter saturation voltage

IC=4A IB=8mA

2

V

2SD1277

VCB=60V IE=0

0.1

Ma

ICBO

Collector cut-off current

2SD1277A

VCB=80V IE=0

0.1

mA

IEBO

Emitter cut-off current

VEB=7V; IC=0

2

mA

hFE-1

DC current gain

IC=8A ; VCE=3V

500

hFE-2

DC current gain

IC=4A ; VCE=3V

2000

10000

fT

Transition frequency

IC=0.5A;

VCE=10V;f=1MHz

20

MHz

Switching times

ton

Turn-on time

0.5

Μs

tstg

Storage time

4

Μs

tf

Fall time

IC=4A ;IB1=8mA

IB2=-8mA;VCC=50V

1

μs

hFE-2 Classifications

Q

R

2000-5000

4000-10000

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